NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at collector currents to 1.0 A. Sourced from

Process 05. See MPSA14 for characteristics.

MMBTA13

MPSA13

PZTA13

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

30

V

Collector-Base Voltage

30

V

Emitter-Base Voltage

10

V

Collector Current - Continuous

1.2

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Characteristic

Max

Units

MPSA13

*MMBTA13

**PZTA13

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

Thermal Characteristics

TA = 25°C unless otherwise noted

C

B

E

TO-92

C

B

E

SOT-23

Mark: 1M

B

C

C

SOT-223

E

ã

1997 Fairchild Semiconductor Corporation