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MMBD7000 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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MMBD7000 bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted MMBD7000 *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 5C 3 12 Symbol Parameter Value Units WIV Working Inverse Voltage 70 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond 1.0 2.0 A A Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C Symbol Characteristic Max Units MMBD7000* PD Total Device Dissipation Derate above 25 °C 350 2.8 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient 357 °C/W 3 2 1 CONNECTION DIAGRAM SOT-23 3 1 2 Discrete POWER & Signal Technologies ©1997 Fairchild Semiconductor Corporation |
Số phần tương tự - MMBD7000 |
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Mô tả tương tự - MMBD7000 |
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