DATA SHEET

LMV321/LMV358/LMV324

4

REV. 1A April 2004

Electrical Specifications

Parameter

Conditions

Min.

Typ.

Max.

Unit

AC Performance

Gain Bandwidth Product

1.4

MHz

Phase Margin

73

deg

Gain Margin

12

dB

Slew Rate

1.5

V/

µs

Input Voltage Noise

>50kHz

33

nV/

√Hz

Crosstalk: LMV358

100kHz

91

dB

LMV324

100kHz

80

dB

DC Performance

17

mV

Average Drift

6

µV/°C

<1

nA

<1

nA

DC

50

65

dB

50

70

dB

100

150

µA

Input Characteristics

0

-0.4

V

HI

3.8

3.6

V

50

75

dB

Output Characteristics

Output Voltage Swing

0.036 to 4.95

V

0.1

0.013

V

4.98

4.9

V

5

+34

mA

10

-23

mA

Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are

determined from tested parameters.

Notes:

1. Guaranteed by testing or statistical analysis at +25°C.

2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure.

Package Thermal Resistance

Package

θ

JA

5 lead SC70

331.4°C/W

5 lead SOT23

256°C/W

8 lead SOIC

152°C/W

8 lead MSOP

206°C/W

14 lead TSSOP

100°C/W

14 lead SOIC

88°C/W