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MC9S12A128CPVE bảng dữ liệu(PDF) 1 Page - Freescale Semiconductor, Inc

tên linh kiện MC9S12A128CPVE
Giải thích chi tiết về linh kiện  16-bit Microcontrollers MC9S12A128
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MC9S12A128CPVE bảng dữ liệu(HTML) 1 Page - Freescale Semiconductor, Inc

  MC9S12A128CPVE Datasheet HTML 1Page - Freescale Semiconductor, Inc MC9S12A128CPVE Datasheet HTML 2Page - Freescale Semiconductor, Inc  
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128 KB Flash
HCS12 CPU
16-Key Wake-Up
IRQ Ports
Vreg
5V to 2.5V
Enhanced Capture Timer
16-bit, 8-ch.
ATD0
10-bit, 8-ch.
8 KB RAM
2 KB EEPROM
ATD1
10-bit, 8-ch.
2 x SCI
2 x SPI
I2C
PWM
8-bit, 8-ch./16-bit, 4-ch.
Up to
91 GPIO
16-bit Microcontrollers
MC9S12A128
Overview
Freescale Semiconductor’s MC9S12A128
Flash microcontroller (MCU) is the next
generation of the highly successful
68HC12 architecture. Using Freescale’s
industry-leading 0.25 µs Flash, the A128 is
part of a pin-compatible family that scales
from 32 KB to 512 KB of Flash memory.
The MC9S12A128 provides an upward
migration path from Freescale’s 68HC08,
68HC11 and 68HC12 architectures for
applications that need larger memory,
more peripherals and higher performance.
Target Applications
> Instrumentation
> Energy management
> Industrial control
> Robotics
> Safety equipment
> Security
Features
Benefits
High-Performance 16-bit HCS12 CPU Core
> 25 MHz bus operation at 5V for 40 ns
minimum instruction cycle time
> Opcode compatible with the 68HC11
and 68HC12
> C-optimized architecture produces extremely
compact code
On-Chip Debug Interface
> Dedicated serial debug interface
> On-chip breakpoints
> Real-time in-circuit emulation and debug
without expensive and cumbersome
box emulators
> Read/write memory and registers while running
at full speed
Integrated Third-Generation Flash Memory
2 KB Integrated EEPROM
> Flexible protection scheme for protection
against accidental program or erase
> EEPROM can be programmed in 46 µs
> Can erase 4 bytes at a time and program
2 bytes at a time for calibration, security,
personality and diagnostic information
> In-application reprogrammable
> Self-timed, fast programming
• Fast Flash page erase—20 ms
(512 bytes)
• Can program 16 bits in 20 µs while
in burst mode
> 5V Flash program/erase/read
> Flash granularity—512 byte Flash
erase/2 byte Flash program
> Two independently programmable
Flash arrays
> Flexible block protection and security
> Flexibility to change code in the field
> Efficient end-of-line programming
> Total program time for 128 KB code is less
than five seconds
> Reduces production programming cost
through ultra-fast programming
> No external high voltage or charge
pump required
> Virtual EEPROM implementation, Flash array
usable for EE extension
> Can erase one array while executing code
from another
10-bit Analog-to-Digital Converter (ADC)
> Two, 8-channel ADCs
> 7 µs, 10-bit single conversion time, scan mode
available
> Fast, easy conversion from analog inputs
like position sensors, analog meters and
photovoltaic cells to digital values for
CPU processing
> Can effectively have 3.5 µs conversion time
by sampling same signal with both ADCs


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