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STF20N95K5 bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 950 V, 0.275 廓, 17.5 A SuperMESH 5??Power MOSFET in D짼PAK, TO-220FP, TO-220 and TO-247 packages
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STF20N95K5 bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Electrical characteristics
Doc ID 16825 Rev 4
5/20
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 475 V, ID = 9 A,
RG=4.7 Ω, VGS=10 V
(see Figure 21)
-
17
12
70
20
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
-
17.5
70
mA
A
VSD
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD= 17.5 A, VGS=0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 17.5 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 20)
-
530
12
44
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 17.5 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C(see
Figure 20)
-
650
14
44
ns
μC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO Gate-source breakdown voltage Igs ± 1mA, (ID= 0)
30
-
-
V


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