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STTH12T06 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  600 V tandem extra fast diode
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STTH12T06 bảng dữ liệu(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
May 2013
Doc ID024431 Rev1
1/9
9
STTH12T06
600 V tandem extra fast diode
Datasheet
− production data
Features
• High voltage rectifier
• Tandem diodes in series
• Very low switching losses
• Insulated device with internal ceramic
• Equal thermal conditions for both 300 V diodes
• Static and dynamic equilibrium of internal
diodes are warranted by design
• Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
Description
This device is part of ST's second generation of
600 V tandem diodes. It has ultralow switching-
losses with a minimized QRR (6.5 nC) that makes
it perfect for use in circuits working in hard-
switching mode. In particular the VF/QRR trade-off
positions this device between standard ultrafast
diodes and silicon-carbide Schottky rectifiers in
terms of price/performance ratio.
The device offers a new positioning giving more
flexibility to power-circuit designers looking for
good performance while still respecting cost
constraints.
Featuring ST's Turbo 2 600 V technology, the
device is particularly suited as a boost diode in
continuous conduction mode power factor
correction circuits.
Table 1. Device summary
Symbol
Value
IF(AV)
12 A
VRRM
600 V
trr (typ)
15 ns
IRM (typ)
2.3 A
VF (typ)
2.05 V
IFRM
65 A
Tj (max)
175 °C
TO-220AC ins
STTH
DI
12T06
A
A
K
K
www.st.com


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