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HUFA76609D3S bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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HUFA76609D3S bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2002 Fairchild Semiconductor Corporation HUFA76609D3, HUFA76609D3S Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 100 - - V ID = 250µA, VGS = 0V, TC = -40 oC (Figure 12) 90 - - V Zero Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 1 µA VDS = 90V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 10A, VGS = 10V (Figures 9, 10) - 0.130 0.160 Ω ID = 7A, VGS = 5V (Figure 9) - 0.135 0.165 Ω ID = 7A, VGS = 4.5V (Figure 9) - 0.140 0.168 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-251 and TO-252 - - 3.06 oC/W Thermal Resistance Junction to Ambient RθJA - - 100 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 50V, ID = 7A VGS = 4.5V, RGS = 20Ω (Figures 15, 21, 22) - - 77 ns Turn-On Delay Time td(ON) -10- ns Rise Time tr -41- ns Turn-Off Delay Time td(OFF) -30- ns Fall Time tf -28- ns Turn-Off Time tOFF - - 87 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 50V, ID = 10A VGS = 10V, RGS = 24Ω (Figures 16, 21, 22) - - 36 ns Turn-On Delay Time td(ON) -6 - ns Rise Time tr -18- ns Turn-Off Delay Time td(OFF) -55- ns Fall Time tf - 39 - ns Turn-Off Time tOFF - - 141 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 50V, ID = 7A, Ig(REF) = 1.0mA (Figures 14, 19, 20) -13 16 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 7.3 8.8 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 0.5 0.6 nC Gate to Source Gate Charge Qgs -1.4 - nC Gate to Drain “Miller” Charge Qgd -3.4 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 425 - pF Output Capacitance COSS -75- pF Reverse Transfer Capacitance CRSS -22- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 7A - - 1.25 V ISD = 4A - - 1.0 V Reverse Recovery Time trr ISD = 7A, dISD/dt = 100A/µs- - 92 ns Reverse Recovered Charge QRR ISD = 7A, dISD/dt = 100A/µs - - 273 nC HUFA76609D3, HUFA76609D3S |
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