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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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HUFA76432P3 bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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HUFA76432P3 bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  ©2001 Fairchild Semiconductor Corporation HUFA76432P3, HUFA76432S3S Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 60 - - V ID = 250µA, VGS = 0V , TC = -40 oC (Figure 12) 55 - - V Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V - - 1 µA VDS = 50V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 59A, VGS = 10V (Figures 9, 10) - 0.014 0.017 Ω ID = 39A, VGS = 5V (Figure 9) - 0.016 0.019 Ω ID = 37A, VGS = 4.5V (Figure 9) - 0.017 0.021 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-220AB and TO-263AB - - 1.15 oC/W Thermal Resistance Junction to Ambient RθJA -- 62 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 30V, ID = 37A VGS = 4.5V, RGS = 6.2Ω (Figures 15, 21, 22) - - 400 ns Turn-On Delay Time td(ON) -14- ns Rise Time tr - 250 - ns Turn-Off Delay Time td(OFF) -26- ns Fall Time tf -82- ns Turn-Off Time tOFF - - 160 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 30V, ID = 60A VGS = 10V, RGS = 6.8Ω (Figures 16, 21, 22) - - 165 ns Turn-On Delay Time td(ON) -9.0 - ns Rise Time tr - 100 - ns Turn-Off Delay Time td(OFF) -53- ns Fall Time tf - 107 - ns Turn-Off Time tOFF - - 240 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 30V, ID = 39A, Ig(REF) = 1.0mA (Figures 14, 19, 20) -44 53 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 24 29 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 1.6 2 nC Gate to Source Gate Charge Qgs -4.3 - nC Reverse Transfer Capacitance Qgd -9.8 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 1765 - pF Output Capacitance COSS - 470 - pF Reverse Transfer Capacitance CRSS -75- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 39A - - 1.25 V ISD = 20A - - 1.00 V Reverse Recovery Time trr ISD = 39A, dISD/dt = 100A/µs- - 65 ns Reverse Recovered Charge QRR ISD = 39A, dISD/dt = 100A/µs - - 120 nC HUFA76432P3, HUFA76432S3S |
Số phần tương tự - HUFA76432P3 |
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Mô tả tương tự - HUFA76432P3 |
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