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HUFA76419S3S bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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2 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA76419P3, HUFA76419S3S Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 60 - - V ID = 250µA, VGS = 0V , TC = -40 oC (Figure 12) 55 - - V Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V - - 1 µA VDS = 50V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 29A, VGS = 10V (Figures 9, 10) - 0.029 0.035 Ω ID = 19A, VGS = 5V (Figure 9) - 0.033 0.040 Ω ID = 18A, VGS = 4.5V (Figure 9) - 0.035 0.044 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-220 and TO-263 - - 2.0 oC/W Thermal Resistance Junction to Ambient RθJA -- 62 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 30V, ID = 18A VGS = 4.5V, RGS = 12Ω (Figures 15, 21, 22) - - 245 ns Turn-On Delay Time td(ON) -12- ns Rise Time tr - 150 - ns Turn-Off Delay Time td(OFF) -27- ns Fall Time tf -55- ns Turn-Off Time tOFF - - 125 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 30V, ID = 29A VGS = 10V, RGS = 12Ω (Figures 16, 21, 22) - - 110 ns Turn-On Delay Time td(ON) -6.7 - ns Rise Time tr -66- ns Turn-Off Delay Time td(OFF) -45- ns Fall Time tf - 76 - ns Turn-Off Time tOFF - - 185 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 30V, ID = 19A, Ig(REF) = 1.0mA (Figures 14, 19, 20) -22 28 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 13 16 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 0.9 1.1 nC Gate to Source Gate Charge Qgs -2.7 - nC Gate to Drain "Miller" Charge Qgd -6 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 900 - pF Output Capacitance COSS - 250 - pF Reverse Transfer Capacitance CRSS -45- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 19A - - 1.25 V ISD = 10A - - 1.0 V Reverse Recovery Time trr ISD = 19A, dISD/dt = 100A/µs- - 78 ns Reverse Recovered Charge QRR ISD = 19A, dISD/dt = 100A/µs - - 230 nC HUFA76419P3, HUFA76419S3S |
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