STB/D/F/P/U5N62K3

Electrical characteristics

Doc ID 17361 Rev 2

5/19

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

(see Figure 19)

-

12

8

40

21

-

ns

ns

ns

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

4.2

16.8

A

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see Figure 21)

-

290

1900

13

ns

nC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see Figure 21)

-

320

2200

14

ns

nC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

voltage

Igs=± 1 mA (open drain)

30

-

-

V