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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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HUFA75842S3S bảng dữ liệu(PDF) 4 Page - Fairchild Semiconductor |
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HUFA75842S3S bảng dữ liệu(HTML) 4 Page - Fairchild Semiconductor |
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4 / 10 page  ©2001 Fairchild Semiconductor Corporation HUFA75842P3, HUFA75842S3S Rev. B FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 10 100 10 300 300 1 1 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = MAX RATED TC = 25 oC SINGLE PULSE 100 100 µs 10ms 1ms LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS 300 0.001 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25 oC STARTING TJ = 150 oC 10 100 0 40 60 80 23 4 6 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC 5 20 0 40 60 80 01 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS =5V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 20 VGS = 10V VGS = 6V 0 1.0 1.5 2.0 3.0 -80 -40 0 40 80 120 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 43A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 160 2.5 0.5 0.6 0.8 1.0 1.2 -80 -40 0 40 80 120 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 160 HUFA75842P3, HUFA75842S3S |
Số phần tương tự - HUFA75842S3S |
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Mô tả tương tự - HUFA75842S3S |
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