công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
HUFA75829D3 bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
|
HUFA75829D3 bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA75829D3, HUFA75829D3S Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 150 - - V Zero Gate Voltage Drain Current IDSS VDS = 140V, VGS = 0V - - 1 µA VDS = 135V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Drain to Source On Resistance rDS(ON) ID = 18A, VGS = 10V (Figure 9) - 0.0925 0.110 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-251 and TO-252 - - 1.36 oC/W Thermal Resistance Junction to Ambient RθJA - - 100 oC/W SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 75V, ID = 18A VGS = 10V, RGS = 10Ω (Figures 18, 19) - - 58 ns Turn-On Delay Time td(ON) -8.5 - ns Rise Time tr -30- ns Turn-Off Delay Time td(OFF) -53- ns Fall Time tf - 30 - ns Turn-Off Time tOFF - - 125 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 75V, ID = 18A, Ig(REF) = 1.0mA (Figures 13, 16, 17) -58 70 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - 31 37 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 2.1 2.5 nC Gate to Source Gate Charge Qgs -4.6 - nC Gate to Drain "Miller" Charge Qgd -11- nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 1080 - pF Output Capacitance COSS - 260 - pF Reverse Transfer Capacitance CRSS -90- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 18A - - 1.25 V ISD = 9A - - 1.00 V Reverse Recovery Time trr ISD = 18A, dISD/dt = 100A/µs - - 155 ns Reverse Recovered Charge QRR ISD = 18A, dISD/dt = 100A/µs - - 800 nC HUFA75829D3, HUFA75829D3S |
Số phần tương tự - HUFA75829D3 |
|
Mô tả tương tự - HUFA75829D3 |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |