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HUFA75637S3ST bảng dữ liệu(PDF) 7 Page - Fairchild Semiconductor |
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HUFA75637S3ST bảng dữ liệu(HTML) 7 Page - Fairchild Semiconductor |
7 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA75637P3, HUFA75637S3S Rev. B PSPICE Electrical Model .SUBCKT HUFA75637 2 1 3 ; rev 23 June 1999 CA 12 8 2.70e-9 CB 15 14 2.70e-9 CIN 6 8 1.56e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 113.5 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 6.5e-9 LSOURCE 3 7 2.3e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 1.68e-2 RGATE 9 20 0.86 RLDRAIN 2 5 10 RLGATE 1 9 26 RLSOURCE 3 7 11 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 1.65e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3.5))} .MODEL DBODYMOD D (IS = 1.30e-12 IKF = 19 RS = 2.86e-3 XTI = 5 TRS1 = 2.25e-3 TRS2 = 1.00e-6 CJO = 1.90e-9 TT = 6.5e-8 M = 0.55) .MODEL DBREAKMOD D (RS = 3.05e- 1IKF = 1 TRS1 = 8e- 4TRS2 = 3e-6) .MODEL DPLCAPMOD D (CJO = 2.20e- 9IS = 1e-3 0M = 0.83) .MODEL MMEDMOD NMOS (VTO = 3.21 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.86) .MODEL MSTROMOD NMOS (VTO = 3.58 KP = 37.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 2.81 KP = 0.07 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.60 ) .MODEL RBREAKMOD RES (TC1 =1.08e- 3TC2 = -8.6e-7) .MODEL RDRAINMOD RES (TC1 = 7.70e-3 TC2 = 2.20e-5) .MODEL RSLCMOD RES (TC1 = 4.25e-3 TC2 = 1.00e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -2.07e-3 TC2 = -6.65e-6) .MODEL RVTEMPMOD RES (TC1 = -3.20e- 3TC2 =9.67e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -2.4) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -6.2) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.8 VOFF= 0.5) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.8) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 HUFA75637P3, HUFA75637S3S |
Số phần tương tự - HUFA75637S3ST |
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Mô tả tương tự - HUFA75637S3ST |
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