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HUFA75631SK8 bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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HUFA75631SK8 bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  ©2001 Fairchild Semiconductor Corporation HUFA75631SK8 Rev. B Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 100 - - V Zero Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 1 µA VDS = 90V, VGS = 0V, TA = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Drain to Source On Resistance rDS(ON) ID = 5.5A, VGS = 10V (Figure 9) - 0.033 0.039 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RθJA Pad Area = 0.76 in2 (490.3 mm2) (Note 2) (Figures 20, 21) -- 50 oC/W Pad Area = 0.054 in2 (34.8 mm2) (Note 3) (Figures 20, 21) - - 152 oC/W Pad Area = 0.0115 in2 (7.42 mm2)(Note 4) (Figures 20, 21) - - 189 oC/W SWITCHING SPECIFICATIONS Turn-On Time tON VDD = 50V, ID = 5.5A VGS = 10V, RGS = 6.8Ω (Figures 18, 19) - - 50 ns Turn-On Delay Time td(ON) -11- ns Rise Time tr -23- ns Turn-Off Delay Time td(OFF) -39- ns Fall Time tf -31- ns Turn-Off Time tOFF - - 105 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 50V, ID = 5.5A, Ig(REF) = 1.0mA (Figures 13, 16, 17) -66 79 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - 35 43 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 2.4 2.9 nC Gate to Source Gate Charge Qgs -4.75- nC Gate to Drain “Miller” Charge Qgd -12- nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 1225 - pF Output Capacitance COSS - 330 - pF Reverse Transfer Capacitance CRSS - 105 - pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 5.5 A - - 1.25 V ISD = 2.5 A - - 1.00 V Reverse Recovery Time trr ISD = 5.5 A, dISD/dt = 100A/µs- - 96 ns Reverse Recovered Charge QRR ISD = 5.5 A, dISD/dt = 100A/µs - - 310 nC HUFA75631SK8 |
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