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HUFA75617D3 bảng dữ liệu(PDF) 7 Page - Fairchild Semiconductor |
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HUFA75617D3 bảng dữ liệu(HTML) 7 Page - Fairchild Semiconductor |
7 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA75617D3 Rev. B PSPICE Electrical Model .SUBCKT HUFA75617d3 2 1 3 ; rev 24May 2000 CA 12 8 9.9e-10 CB 15 14 1.0e-9 CIN 6 8 5.4e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 117.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 5.24e-9 LSOURCE 3 7 4.25e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.9e-2 RGATE 9 20 2.45 RLDRAIN 2 5 10 RLGATE 1 9 52.4 RLSOURCE 3 7 42.5 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 3.2e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*32),3.5))} .MODEL DBODYMOD D (IS = 6.0e-13 RS = 11.0e-3 XTI = 4.5 TRS1 = 1.1e-3 TRS2 = 7.1e-6 CJO = 6.5e-10 TT = 4.1e-8 M = 0.54) .MODEL DBREAKMOD D (RS = 5.6e- 1TRS1 = 8.0e- 4TRS2 = 3.0e-6) .MODEL DPLCAPMOD D (CJO = 7.0e-1 0IS = 1e-3 0M = 0.89 N = 10) .MODEL MMEDMOD NMOS (VTO = 3.10 KP = 3 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.45) .MODEL MSTROMOD NMOS (VTO = 3.64 KP = 42 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 2.68 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 24.5) .MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = -5.0e-7) .MODEL RDRAINMOD RES (TC1 = 1.20e-2 TC2 = 3.00e-5) .MODEL RSLCMOD RES (TC1 = 3.2e-3 TC2 = 1.0e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -2.2e-3 TC2 = -9.0e-6) .MODEL RVTEMPMOD RES (TC1 = -2.4e- 3TC2 = -1.8e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.9 VOFF= -3.1) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.1 VOFF= -5.9) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.6 VOFF= 0.5) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.6) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 HUFA75617D3 |
Số phần tương tự - HUFA75617D3 |
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Mô tả tương tự - HUFA75617D3 |
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