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FDD850N10L bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDD850N10L bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page www.fairchildsemi.com 2 ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD850N10L FDD850N10L D-PAK 380mm 16mm 2500 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 100 - - V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25 oC- 0.1 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 μA VDS = 80V, TC = 150 oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA1.0 - 2.5 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 12A - 61 75 m Ω VGS = 5V, ID = 12A - 64 96 m Ω gFS Forward Transconductance VDS = 10V, ID = 15.7A -31 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 1100 1465 pF Coss Output Capacitance - 80 105 pF Crss Reverse Transfer Capacitance - 42 - pF Qg(tot) Total Gate Charge at 10V VGS = 10V VDS = 80V ID = 15.7A - 22.2 28.9 nC Qg(tot) Total Gate Charge at 5V VGS = 5V - 12.3 16.0 nC Qgs Gate to Source Gate Charge -3.0 - nC Qgd Gate to Drain “Miller” Charge - 5.7 - nC td(on) Turn-On Delay Time VDD = 50V, ID = 15.7A VGS = 5V, RGEN = 4.7Ω (Note 4) -17 44 ns tr Turn-On Rise Time - 21 52 ns td(off) Turn-Off Delay Time - 27 64 ns tf Turn-Off Fall Time - 8 26 ns ESR Equivalent Series Resistance (G-S) - 1.75 - Ω IS Maximum Continuous Drain to Source Diode Forward Current - - 15.7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 63 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.3 V trr Reverse Recovery Time VGS = 0V, VDS = 80V, ISD = 15.7A dIF/dt = 100A/μs -38 - ns Qrr Reverse Recovery Charge - 50 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 9.1A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 15.7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics |
Số phần tương tự - FDD850N10L |
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Mô tả tương tự - FDD850N10L |
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