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FQD18N20V2 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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1 / 9 page ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 www.fairchildsemi.com FQD18N20V2 / FQU18N20V2 N-Channel QFET® MOSFET 200 V, 15 A, 140 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 15 A, 200 V, RDS(on) = 140 mΩ @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQD18N20V2 / FQU18N20V2 Unit VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 15 A - Continuous (TC = 100°C) 9.75 A IDM Drain Current - Pulsed (Note 1) 60 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 83 W - Derate above 25°C 0.67 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQD18N20V2 / FQU18N20V2 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 1.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient * 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! " ! ! ! " " " ! " ! ! ! " " " S D G I-PAK D-PAK April 2013 G S D G D S |
Số phần tương tự - FQD18N20V2 |
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Mô tả tương tự - FQD18N20V2 |
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