 |
công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
|
công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
FQPF5P20 bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FQPF5P20 bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 / 8 page  ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, May 2000 Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 42.8mH, IAS = -3.4A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -4.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.17 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 µA VDS = -160 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.7 A -- 1.1 1.4 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.7 A -- 2.15 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 330 430 pF Coss Output Capacitance -- 75 98 pF Crss Reverse Transfer Capacitance -- 12 15 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -100 V, ID = -4.8 A, RG = 25 Ω -- 9 28 ns tr Turn-On Rise Time -- 70 150 ns td(off) Turn-Off Delay Time -- 12 35 ns tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = -160 V, ID = -4.8 A, VGS = -10 V -- 10 13 nC Qgs Gate-Source Charge -- 2.8 -- nC Qgd Gate-Drain Charge -- 5.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.4 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -13.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.4 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -4.8 A, dIF / dt = 100 A/µs -- 175 -- ns Qrr Reverse Recovery Charge -- 1.07 -- µC |
Số phần tương tự - FQPF5P20 |
|
Mô tả tương tự - FQPF5P20 |
|
|
|
Link URL |
| Chính sách bảo mật |
| ALLDATASHEET.VN |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Vietnamese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
