STI21N65M5 datasheet(3/22 Pages) STMICROELECTRONICS

tên linh kiện	STI21N65M5

Giải thích chi tiết về linh kiện	N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

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STB/F/I/P/W21N65M5

Electrical ratings

Doc ID 15427 Rev 4

3/22

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, I²PAK,

D²PAK, TO-247

TO-220FP

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

17

17 (1)

1.

Limited only by maximum temperature allowed.

A

ID

Drain current (continuous) at TC = 100 °C

10.7

10.7 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

68

68(1)

A

PTOT

Total dissipation at TC = 25 °C

125

30

W

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

5A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

400

mJ

dv/dt (3)

3.

ISD ≤ 17 A, di/dt ≤ 400 A/µs; VPeak < V(BR)DSS, VDD = 400 V.

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D²PAK

I²PAK TO-220 TO-247 TO-220FP

Rthj-case

Thermal resistance junction-case

max

14.17

°C/W

Rthj-amb

Thermal resistance junction-

ambient max

62.5

50

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb

max

30

°C/W

Tl

Maximum lead temperature for

soldering purpose

300

°C

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Inchange Semiconductor ...	STI21N65M5	358Kb / 2P	isc N-Channel MOSFET Transistor

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