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Giải thích chi tiết về linh kiện  N-channel 900 V, 4.1typ., 3 A Zener-protected SuperMESH??Power MOSFET in DPAK, TO-220 and TO-220FP packages
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Electrical characteristics
Doc ID 9193 Rev 2
5/20
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
3
12
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 3 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3 A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
(Figure 22)
-
510
2.2
8.7
ns
µC
A
Table 9.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS=± 1 mA, ID=0
30
-
-
V


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