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FQP34N20L bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FQP34N20L bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, June 2000 Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.0mH, IAS = 31A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 34A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.16 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 15.5 A VGS = 5 V, ID = 15.5 A -- 0.057 0.060 0.075 0.080 Ω gFS Forward Transconductance VDS = 30 V, ID = 15.5 A -- 41 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 3000 3900 pF Coss Output Capacitance -- 400 520 pF Crss Reverse Transfer Capacitance -- 52 67 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100 V, ID = 34 A, RG = 25 Ω -- 45 100 ns tr Turn-On Rise Time -- 520 1050 ns td(off) Turn-Off Delay Time -- 170 350 ns tf Turn-Off Fall Time -- 370 750 ns Qg Total Gate Charge VDS = 160 V, ID = 34 A, VGS = 5 V -- 55 72 nC Qgs Gate-Source Charge -- 9.9 -- nC Qgd Gate-Drain Charge -- 27 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 31 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 124 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 31 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 34 A, dIF / dt = 100 A/µs -- 205 -- ns Qrr Reverse Recovery Charge -- 1.1 -- µC |
Số phần tương tự - FQP34N20L |
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Mô tả tương tự - FQP34N20L |
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