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1N5357B bảng dữ liệu(PDF) 3 Page - Micro Commercial Components |
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3 / 6 page 3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on logarithmic paper. Examples of this, using the 6.8v , is shown in Figure 6. Mounting contact located as specified in Note 3. (TA=25 ). 4. VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40+/- 10 ms. (TA=25C ). Mounting contact located as specified in Note2. 5. MAXIMUM REGULATOR CURRENT (IZM) - The maximum current shown is based on the maximum voltage of a 5% type unit. Therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual Vz of the device. TL=75Cat maximum from the device body. APPLICATION NOTE: 1N5338B THRU 1N5369B MCC Revision: A 2011/01/01 TM Micro Commercial Components www.mccsemi.com 3 of 6 Since the actual voltage available from a given Zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = qLA PD + TA qLA is the lead‐to‐ambient thermal resistance and PD is the power dissipation. Junction Temperature, TJ, may be found from: TJ = TL + DTJL DTJL is the increase in junction temperature above the lead temperature and may be found from Figure 4 for a train of power pulses or from Figure 1 for dc power. DTJL = qJL PD For worst‐case design, using expected limits of IZ, limits of PD and the extremes of TJ ( DTJ) may be estimated. Changes in voltage, VZ, can then be found from: DV = qVZ DTJ qVZ, the Zener voltage temperature coefficient, is found from Figures 2 and 3. Under high power‐pulse operation, the Zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 4 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 5 be exceeded. |
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Mô tả tương tự - 1N5357B |
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