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LMZ14202EXTTZE bảng dữ liệu(PDF) 3 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  LMZ14202EXT 2A SIMPLE SWITCHER짰 Power Module with 42V Maximum Input Voltage for Military and Rugged Applications
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Exposed Pad
Connect to GND
5
SS
6
FB
3
EN
1
VIN
2
RON
4
GND
7
VOUT
VIN
CIN
Enable
RON
RFBT
CFF
CSS
RFBB
COUT
LMZ14202EXT
VOUT @ 2A
LMZ14202EXT
www.ti.com
SNVS665E – JUNE 2010 – REVISED APRIL 2013
Simplified Application Schematic
Connection Diagram
Figure 2. Top View
7-Lead PFM
PIN DESCRIPTIONS
Pin
Name
Description
1
VIN
Supply input — Nominal operating range is 6V to 42V . A small amount of internal capacitance is contained within the
package assembly. Additional external input capacitance is required between this pin and exposed pad.
2
RON
On Time Resistor — An external resistor from VIN to this pin sets the on-time of the application. Typical values range from
25k to 124k ohms.
3
EN
Enable — Input to the precision enable comparator. Rising threshold is 1.18V nominal; 90 mV hysteresis nominal.
Maximum recommended input level is 6.5V.
4
GND
Ground — Reference point for all stated voltages. Must be externally connected to EP.
5
SS
Soft-Start — An internal 8 µA current source charges an external capacitor to produce the soft-start function. This node is
discharged at 200 µA during disable, over-current, thermal shutdown and internal UVLO conditions.
6
FB
Feedback — Internally connected to the regulation, over-voltage, and short-circuit comparators. The regulation reference
point is 0.8V at this input pin. Connected the feedback resistor divider between the output and ground to set the output
voltage.
7
VOUT
Output Voltage — Output from the internal inductor. Connect the output capacitor between this pin and exposed pad.
EP
EP
Exposed Pad — Internally connected to pin 4. Used to dissipate heat from the package during operation. Must be
electrically connected to pin 4 external to the package.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2010–2013, Texas Instruments Incorporated
Submit Documentation Feedback
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