STW47NM60ND datasheet(4/12 Pages) STMICROELECTRONICS

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Giải thích chi tiết về linh kiện	N-channel 600 V, 0.075 廓 typ., 35 A FDmesh??II Power MOSFET (with fast diode) in a TO-247 package

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Electrical characteristics

STW47NM60ND

4/12

Doc ID 18281 Rev 3

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, Tj= 125 °C

10

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 17.5 A

0.075 0.088

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS=15 V, ID = 17.5 A

-

17

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

4200

180

5

-

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

-

530

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 35 A,

VGS = 10 V,

(see Figure 15)

-

120

24

52

-

nC

Rg

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level = 20 mV

open drain

-1.7

-

Ω

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