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4 / 22 page Electrical characteristics STB/F/I/P/W32N65M5 4/22 Doc ID 15316 Rev 4 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 12 A 0.095 0.119 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 3320 75 5 - pF pF pF Co(tr) (1) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 210 - pF Co(er) (2) 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 70 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 2 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 12 A, VGS = 10 V (see Figure 20) - 72 17 29 - nC nC nC |
Số phần tương tự - STP32N65M5 |
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Mô tả tương tự - STP32N65M5 |
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