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Giải thích chi tiết về linh kiện  N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247
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Electrical characteristics
STB/F/I/P/W32N65M5
4/22
Doc ID 15316 Rev 4
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 12 A
0.095
0.119
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
3320
75
5
-
pF
pF
pF
Co(tr)
(1)
1.
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 520 V
-
210
-
pF
Co(er)
(2)
2.
Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
-
70
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 12 A,
VGS = 10 V
(see Figure 20)
-
72
17
29
-
nC
nC
nC


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