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FQP18N20V2 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

tên linh kiện FQP18N20V2
Giải thích chi tiết về linh kiện  200V N-Channel MOSFET
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nhà sản xuất  FAIRCHILD [Fairchild Semiconductor]
Trang chủ  http://www.fairchildsemi.com
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©2002 Fairchild Semiconductor Corporation
QFETTM
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 18A, 200V, RDS(on) = 0.14Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQP18N20V2
FQPF18N20V2
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current
- Continuous (TC = 25°C)
18
18
A
- Continuous (TC = 100°C)
11.9
11.9
A
IDM
Drain Current
- Pulsed
(Note 1)
72
72
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
340
mJ
IAR
Avalanche Current
(Note 1)
18
A
EAR
Repetitive Avalanche Energy
(Note 1)
12.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.5
V/ns
PD
Power Dissipation (TC = 25°C)
123
40
W
- Derate above 25°C
0.99
0.32
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP18N20V2
FQPF18N20V2
Units
RθJC
Thermal Resistance, Junction-to-Case
1.01
3.1
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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