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1 / 4 page 2SC2458 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458 Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Low noise: NF (2) = 1dB (typ.), 10dB (max) • Complementary to 2SA1048. • Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA DC current gain hFE (Note) VCE = 6 V, IC = 2 mA 70 ⎯ 700 Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V Transition frequency fT VCE = 10 V, IC = 1 mA 80 ⎯ ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 2.0 3.5 pF Noise figure NF VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 kΩ ⎯ 1.0 10 dB Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) |
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