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IRF3710STRLPBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRF3710STRLPBF bảng dữ liệu(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRF3710SPbF IRF3710LPbF HEXFET® Power MOSFET 09/15/09 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 °C/W RθJA Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40 Thermal Resistance www.irf.com 1 VDSS = 100V RDS(on) = 23mΩ ID = 57A S D G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A IDM Pulsed Drain Current 180 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.8 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C PD - 95108A D2Pak IRF3710SPbF TO-262 IRF3710LPbF |
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