SI1902DL datasheet(2/9 Pages) VISHAY

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Giải thích chi tiết về linh kiện	Dual N-Channel 20 V (D-S) MOSFET

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Document Number: 71080

S11-2043-Rev. J, 17-Oct-11

Vishay Siliconix

Si1902DL

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

1

µA

VDS = 16 VGS = 0 V, TJ = 85°C

5

On-State Drain Currenta

ID(on)

VDS  5 V, VGS = 4.5 V

1

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 0.66 A

0.320

0.385



VGS = 2.5 V, ID = 0.40 A

0.560

0.630

Forward Transconductancea

gfs

VDS = 10 V, ID = 0.66 A

1.5

S

Diode Forward Voltagea

VSD

IS = 0.23 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 0.66 A

0.8

1.2

nC

Gate-Source Charge

Qgs

0.06

Gate-Drain Charge

Qgd

0.30

Gate Resistance

Rg

f = 1 MHz

0.2

1

1.7



Turn-On Delay Time

td(on)

VDD = 10 V, RL = 20 

ID  0.5 A, VGEN = 4.5 V, Rg = 6 

10

20

ns

Rise Time

tr

16

30

Turn-Off DelayTime

td(off)

10

20

Fall Time

tf

10

20

Source-Drain Reverse Recovery Time

trr

IF = 0.23 A, dI/dt = 100 A/µs

20

40

Output Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 V thru 2.5 V

2 V

VDS - Drain-to-Source Voltage (V)

1.5 V

1 V

Transfer Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Số phần tương tự - SI1902DL

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	SI1902DL	43Kb / 4P	Dual N-Channel 20-V (D-S) MOSFET Rev. E, 12-Aug-02
	SI1902DL	104Kb / 6P	Dual N-Channel 20-V (D-S) MOSFET S-51415-Rev. H, 03-Apr-06
	SI1902DL	240Kb / 9P	Dual N-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI1902DL-T1	104Kb / 6P	Dual N-Channel 20-V (D-S) MOSFET S-51415-Rev. H, 03-Apr-06
	SI1902DL-T1-E3	104Kb / 6P	Dual N-Channel 20-V (D-S) MOSFET S-51415-Rev. H, 03-Apr-06

More results

Mô tả tương tự - SI1902DL

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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