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SI1902DL bảng dữ liệu(PDF) 2 Page - Vishay Siliconix |
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SI1902DL bảng dữ liệu(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 71080 S11-2043-Rev. J, 17-Oct-11 Vishay Siliconix Si1902DL This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 µA VDS = 16 VGS = 0 V, TJ = 85°C 5 On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V 1 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 0.66 A 0.320 0.385 VGS = 2.5 V, ID = 0.40 A 0.560 0.630 Forward Transconductancea gfs VDS = 10 V, ID = 0.66 A 1.5 S Diode Forward Voltagea VSD IS = 0.23 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 0.66 A 0.8 1.2 nC Gate-Source Charge Qgs 0.06 Gate-Drain Charge Qgd 0.30 Gate Resistance Rg f = 1 MHz 0.2 1 1.7 Turn-On Delay Time td(on) VDD = 10 V, RL = 20 ID 0.5 A, VGEN = 4.5 V, Rg = 6 10 20 ns Rise Time tr 16 30 Turn-Off DelayTime td(off) 10 20 Fall Time tf 10 20 Source-Drain Reverse Recovery Time trr IF = 0.23 A, dI/dt = 100 A/µs 20 40 Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 V thru 2.5 V 2 V VDS - Drain-to-Source Voltage (V) 1.5 V 1 V Transfer Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) |
Số phần tương tự - SI1902DL |
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Mô tả tương tự - SI1902DL |
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