STGD3HF60HDT4 datasheet(5/16 Pages) STMICROELECTRONICS

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STGD3HF60HD

Electrical characteristics

Doc ID 17690 Rev 3

5/16

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 400 V, IC = 1.5 A

RG= 100 Ω, VGE = 15 V

(see Figure 19)

-

11

4

285

-

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 400 V, IC = 1.5 A

RG = 100 Ω, VGE = 15 V,

Tj =125 °C (see Figure 19)

-

10

5

265

-

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 400 V, IC = 1.5 A,

RGE = 100 Ω, VGE = 15 V

(see Figure 19)

-

26

60

50

-

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 400 V, IC = 1.5 A,

RGE = 100 Ω, VGE =15 V,

Tj = 125 °C (see Figure 19)

-

64

69

71

-

ns

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

(1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit in (see Figure 20). If the IGBT is

offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode

are at the same temperature (25°C and 125°C).

2.

Turn-off losses include also the tail of the collector current.

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 400 V, IC = 1.5 A

RG = 100 Ω, VGE=15 V

(see Figure 19)

-

19

12

31

-

µJ

Eon

(1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 400 V, IC = 1.5 A

RG = 100 Ω, VGE = 15 V,

Tj = 125 °C (see Figure 19)

-

38

35

73

-

µJ

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

Forward on-voltage

IF = 1.5 A

IF = 1.5 A, Tj=125 °C

-

1.4

1.15

1.8

V

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 1.5 A, VR = 40 V,

di/dt = 100 A/

μs

(see Figure 20)

-

85

124

3

ns

nC

A

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 1.5 A,VR = 40 V,

Tj =125 °C, di/dt = 100 A/μs

(see Figure 20)

-

114

194

3.5

ns

nC

A

Số phần tương tự - STGD3HF60HDT4

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGD3HF60HDT4	925Kb / 16P	4.5 A, 600 V very fast IGBT with Ultrafast diode
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	STGD3HF60HDT4	925Kb / 16P	4.5 A, 600 V very fast IGBT with Ultrafast diode December 2010

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Mô tả tương tự - STGD3HF60HDT4

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