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ADG712BR bảng dữ liệu(PDF) 4 Page - Analog Devices

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ADG711/ADG712/ADG713
Rev. B | Page 4 of 16
VDD = +3 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
Parameter
+25°C
−40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance (RON)
5
5.5
Ω typ
VS = 0 V to VDD, IS = −10 mA;
8
Ω max
See Figure 11
On Resistance Match Between
0.1
Ω typ
VS = 0 V to VDD, IS = −10 mA
Channels (ΔRON)
0.3
Ω max
On Resistance Flatness (RFLAT(ON))
2.5
Ω typ
VS = 0 V to VDD, IS = −10 mA
LEAKAGE CURRENTS
VDD = +3.3 V
Source Off Leakage IS (Off )
±0.01
nA typ
VS = 3 V/1 V, VD = 1 V/3 V
±0.1
±0.2
nA max
See Figure 12
Drain Off Leakage ID (Off )
±0.01
nA typ
VS = 3 V/1 V, VD = 1 V/ 3 V
±0.1
±0.2
nA max
See Figure 12
Channel On Leakage ID, IS (On)
±0.01
nA typ
VS = VD = 1 V, or 3 V
±0.1
±0.2
nA max
See Figure 13
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.4
V max
Input Current
IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
DYNAMIC CHARACTERISTICS1
tON
13
ns typ
RL = 300 Ω, CL = 35 pF
20
ns max
VS = 2 V; see Figure 14
tOFF
7
ns typ
RL = 300 Ω, CL = 35 pF
12
ns max
VS = 2 V; see Figure 14
Break-Before-Make Time Delay, tD
7
ns typ
RL = 300 Ω, CL = 35 pF
(ADG713 Only)
1
ns min
VS1 = VS2 = 2 V; see Figure 15
Charge Injection
3
pC typ
VS = 1.5 V; RS = 0 Ω, CL = 1 nF; see Figure 16
Off Isolation
−58
dB typ
RL = 50 Ω, CL = 5 pF, f = 10 MHz
−78
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 17
Channel-to-Channel Crosstalk
−90
dB typ
RL = 50 Ω, CL = 5 pF, f = 10 MHz; see Figure 18
Bandwidth −3 dB
200
MHz typ
RL = 50 Ω, CL = 5 pF; see Figure 19
CS
10
pF typ
CD
10
pF typ
CD, CS (On)
22
pF typ
POWER REQUIREMENTS
VDD = +3.3 V
IDD
0.001
μA typ
Digital inputs = 0 V or 3 V
1.0
μ max
1 Guaranteed by design, not subject to production test.


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