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MC33661PEF bảng dữ liệu(PDF) 8 Page - Freescale Semiconductor, Inc |
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MC33661PEF bảng dữ liệu(HTML) 8 Page - Freescale Semiconductor, Inc |
8 / 22 page Analog Integrated Circuit Device Data 8 Freescale Semiconductor 33661 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS SLEEP MODE AND WAKE-UP TIMINGS EN Pin Wake-up Time (9) tLWUE — 5.0 15 s WAKE Pin Filter Time (10) tWF 10 — 70 s LIN Pin Wake-up Filter Time (LIN Bus Wake-Up) (11) tWUF 40 70 120 s Sleep Mode Delay Time (12) EN HIGH-to-LOW tSD 50 — — s Delay for INH Turning off When Device Enters in Sleep Mode(16), (17) EN HIGH-to-LOW and INH HIGH-to-LOW tSD_INH — — 50 s Delay Time Between EN and TXD for Mode Selection (13), (14) tD_MS 5.0 — — s Delay Time Between First TXD after Device Mode Selection (13), (14) tD_COM 50 — — s FAST BAUD RATE TIMING Delay Entering Fast Baud Rate Using Toggle Function (15) EN LOW to EN HIGH t1 — — 35 s Delay on EN Pin Resetting Fast Baud Rate to Previous Baud Rate (15) EN LOW to EN HIGH t2 — — 5.0 s Notes 9. See Figures 7 and 8, 10. 10. See Figures 9 and 10, 10. 11. See Figures 11 and 12, 11. 12. See Figure 14a, 11. 13. See Figures 7 through 12, pp. 10–11. 14. This parameter is guaranteed by design; however, it is not production tested. 15. See Figure 13, 11. 16. No capacitor is connected to the INH pin. Measurement is done between the EN HIGH-to-LOW transition at 80% of INH voltage. 17. See Figure 14b, 11. Table 4. Dynamic Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V VSUP 18 V, -40C TA 125C, GND = 0 V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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Mô tả tương tự - MC33661PEF |
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