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STP7N95K3 bảng dữ liệu(PDF) 4 Page - STMicroelectronics |
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4 / 15 page Electrical characteristics STF7N95K3, STP7N95K3, STW7N95K3 4/15 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 950 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 3.6 A 1.1 1.35 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID = 3.6 A 5 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 1031 79 0.9 pF pF pF Co(tr) (2) 2. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VDS = 0 to 760 V, VGS = 0 60 pF Co(er) (3) 3. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related VDS = 0 to 760 V, VGS = 0 36 pF RG Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain 2.4 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 760 V, ID = 7.2 A, VGS = 10 V (see Figure 20) 34 6 20 nC nC nC |
Số phần tương tự - STP7N95K3 |
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Mô tả tương tự - STP7N95K3 |
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