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SZNUP2301MW6T1G bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Low Capacitance Diode Array for ESD Protection in Two Data Lines
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NUP2301MW6T1G, SZNUP2301MW6T1G
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MAXIMUM RATINGS (Each Diode) (TJ = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1) (Averaged over any 20 ms Period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
IFSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Ambient
RqJA
625
C/W
Lead Solder Temperature
Maximum 10 Seconds Duration
TL
260
C
Junction Temperature
TJ
−55 to +150
C
Storage Temperature
Tstg
−55 to +150
C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR)
70
Vdc
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150C)
(VR = 70 Vdc, TJ = 150C)
IR
2.5
30
50
mAdc
Capacitance (between I/O pins)
(VR = 0 V, f = 1.0 MHz)
CD
1.0
2.0
pF
Capacitance (between I/O pin and ground)
(VR = 0 V, f = 1.0 MHz)
CD
1.6
3
pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250
mVdc
2. FR−5 = 1.0  0.75  0.062 in.
3. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
4. Include SZ-prefix devices where applicable.


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