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IRLZ44NPBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRLZ44NPBF bảng dữ liệu(HTML) 1 Page - International Rectifier |
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1 / 9 page  HEXFET® Power MOSFET IRLZ44NPbF PD - 94831 l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free VDSS = 55V RDS(on) = 0.022Ω ID = 47A S D G TO-220AB 11/11/03 Parameter Min. Typ. Max. Units RθJC Junction-to-Case 1.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 Thermal Resistance Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levelstoapproximately50watts. Thelowthermalresistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Description Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 47 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 33 A IDM Pulsed Drain Current 160 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy 210 mJ IAR Avalanche Current 25 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Absolute Maximum Ratings |
Số phần tương tự - IRLZ44NPBF |
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Mô tả tương tự - IRLZ44NPBF |
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