STS26N3LLH6 datasheet(1/14 Pages) STMICROELECTRONICS

tên linh kiện	STS26N3LLH6

Giải thích chi tiết về linh kiện	N-channel 30 V, 0.0038 廓, 26 A, SO-8 STripFET??VI DeepGATE??Power MOSFET

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October 2011

Doc ID 019030 Rev 2

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STS26N3LLH6

N-channel 30 V, 0.0038

Ω, 26 A, SO-8

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

■ Very low switching gate charge

Applications

■ Switching applications

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure.The resulting Power

MOSFET exhibits the lowest RDS(on) in all

packages.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STS26N3LLH6

30 V

0.0044

Ω

26 A

1

3

4

5

2

7 6

8

SO-8

Table 1.

Device summary

Order code

Marking

Packag

Packaging

STS26N3LLH6

26G3L

SO-8

Tape and reel

www.st.com

Số phần tương tự - STS26N3LLH6

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
SamHop Microelectronics...	STS2601	163Kb / 7P	P-Channel Enhancement Mode Field Effect Transistor
VBsemi Electronics Co.,...	STS2601	456Kb / 9P	P-Channel 30-V (D-S) MOSFET
SamHop Microelectronics...	STS2611	619Kb / 7P	P-Channel E nhancement Mode Field Effect Transistor
VBsemi Electronics Co.,...	STS2611	760Kb / 9P	P-Channel 30-V (D-S) MOSFET
SamHop Microelectronics...	STS2620	926Kb / 11P	Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

More results

Mô tả tương tự - STS26N3LLH6

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