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STGW40N120KD bảng dữ liệu(PDF) 7 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  40 A, 1200 V short circuit rugged IGBT with Ultrafast diode
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STGW40N120KD bảng dữ liệu(HTML) 7 Page - STMicroelectronics

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STGW40N120KD, STGWA40N120KD
Electrical characteristics
Doc ID 15360 Rev 5
7/15
Figure 8.
Normalized gate threshold voltage
vs. temperature
Figure 9.
Normalized breakdown voltage vs.
temperature
Figure 10.
Switching losses vs. collector
current
Figure 11.
Switching losses vs. gate
resistance
Figure 12.
Switching losses vs. temperature
Figure 13.
Thermal impedance
VGE(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
0.75
0.85
0.95
1.05
0.65
125
IC=1mA
AM11225v1
V(BR)CES
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.92
0.94
0.98
1.00
1.02
1.06
0.96
1.06
125
IC=1mA
AM11226v1
E
0
10
IC(A)
(µJ)
5
15
2000
Eon
Eoff
20
VCC=960V, RG=10Ω
VGE=15V, TJ=125°C
4000
6000
8000
25
30
AM11227v1
E
4000
0
60
RG(
Ω)
(µJ)
30
90
8000
Eon
Eoff
120
VCC=960V, IC=30A
VGE=15V, TJ=125°C
150 180 210
12000
2000
6000
10000
14000
AM11228v1
E
0
100
TJ(°C)
(µJ)
25
125
2000
Eon
Eoff
VCC=960V, IC=30A
VGE=15V, RG=10Ω
50
75
150
4000
6000
8000
AM11229v1


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