BA

ΟΟST / BAΟΟSFP series

Regulator ICs

9/11

(9) When the connected load which contains a big inductance component in an output terminal is connected and the

occurrence of a reverse electromotive force can be considered at the time of and power-output OFF at the time of starting,

I ask the insertion of protection diode of you.

(Example)

Output

pin

(10) Although it is sure that the example of an application circuit should be recommended, in a usage, I fully ask the

validation of a property of you.

In addition, when you alter the circuit constant with outside and you become a usage, please see and decide sufficient

margin in consideration of the dispersion in an external component and IC of our company etc. not only including the static

characteristic but including a transient characteristic.

This IC is monolithic IC and has P+ isolation and P substrate for an isolation between each element.

A P-N junction is formed by these P layers and N layers of each element, and various kinds of parasitic elements are

formed. For example, when the resistor and the transistor are connected with the pin like the example of a simple

architecture,

•At a resistor, it is at the time of GND > (PIN A), at a transistor (NPN), it is at the time of GND > (PIN B),

A P-N junction operates as parasitism diode.

•At a transistor (NPN), it is at the time of GND > (PIN B),

The NPN transistor of a parasitic element operates by N layers of other elements which approach with the

above-mentioned parasitism diode.

A parasitic element is inevitably made according to a potential relation on the architecture of IC.

When a parasitic element operates, the interference of a circuit operation is caused and the cause of a malfunction, as a

result a destructive is obtained.

Therefore, please be fully careful of impressing a voltage lower than GND(P substrate) to an input/output terminal etc. not

to carry out usage with which a parasitic element operates.