công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
FDZ2554P bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
|
FDZ2554P bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDZ2554P Rev C5 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –13 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –0.8 –1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –6.5 A VGS = –2.5 V, ID = –5 A VGS = –4.5 V, ID = –6.5 A, TJ=125°C 21 36 30 28 45 43 m Ω gFS Forward Transconductance VDS = –5 V, ID = –6.5 A 24 S Dynamic Characteristics Ciss Input Capacitance 1430 pF Coss Output Capacitance 319 pF Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz 164 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 9.2 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 12 22 ns tr Turn–On Rise Time 9 18 ns td(off) Turn–Off Delay Time 62 100 ns tf Turn–Off Fall Time VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 37 60 ns Qg Total Gate Charge 14 20 nC Qgs Gate–Source Charge 3 nC Qgd Gate–Drain Charge VDS = –10 V, ID = –6.5 A, VGS = –4.5 V 4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.75 A VSD Drain–Source Diode Forward Voltage VGS = 0 V,IS = –1.75 A (Note 2) –0.7 –1.2 V trr Reverse Recovery Time 25 ns Qrr Reverse Recovery Charge IF = –6.5 A, diF/dt = 100 A/µs 20 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 60°C/W when mounted on a 1in2 pad of 2 oz copper b) 108°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% |
Số phần tương tự - FDZ2554P |
|
Mô tả tương tự - FDZ2554P |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |