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FDZ2551N bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDZ2551N bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page November 1999 ADVANCE INFORMATION 1999 Fairchild Semiconductor Corporation FDZ2551N Rev A1(W) FDZ2551N Dual N-Channel 2.5V Specified PowerTrench TM BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra- low profile packaging, low gate charge, and low RDS(ON). Applications •= Battery management •= Load switch •= Battery protection Features •= 9 A, 20 V. RDS(ON) = 0.018 Ω =@ V GS = 4.5 V RDS(ON) = 0.030 Ω @ V GS = 2.5 V. •= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. •= Ultra-thin package: less than 0.70 mm height when mounted to PCB. •= Outstanding thermal transfer characteristics: significantly better than SO-8. •= Ultra-low Qg x RDS(ON) figure-of-merit. •= High power and current handling capability. Q2 Q1 Pin 1 G S D D S S S D S S S S G S S D D D Bottom Pin 1 Top S S G G D Q1 Q2 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) 9 A – Pulsed 20 PD Power Dissipation (Steady State) (Note 1a) 3 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 8 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity F2551 FDZ2551N TBD TBD TBD |
Số phần tương tự - FDZ2551N |
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Mô tả tương tự - FDZ2551N |
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