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FDZ208P bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDZ208P bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  FDZ208P Rev D (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –20 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage Current, Forward VGS = –25 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.5 –3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –12.5 A VGS = –4.5 V, ID = –9.5 A VGS = –10 V,ID = –12.5A,TJ=125°C 9 13 11.7 10.5 16.5 15 m Ω gFS Forward Transconductance VDS = –10 V, ID = –12.5 A 40 S Dynamic Characteristics Ciss Input Capacitance 2409 pF Coss Output Capacitance 614 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 300 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 13 24 ns tr Turn–On Rise Time 11 21 ns td(off) Turn–Off Delay Time 74 119 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 42 68 ns Qg Total Gate Charge 25 35 nC Qgs Gate–Source Charge 5 nC Qgd Gate–Drain Charge VDS = –15 V, ID = –12.5 A, VGS = –5 V 10 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.8 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.8 A (Note 2) –0.7 –1.2 V trr Diode Reverse Recovery Time 29.5 ns Qrr Diode Reverse Recovery Charge IF = -12.5 A, di/dt = 100 A/µs 30.2 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 56°C/W when mounted on a 1in2 pad of 2 oz copper b) 119°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% |
Số phần tương tự - FDZ208P |
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Mô tả tương tự - FDZ208P |
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