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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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FDZ202P bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDZ202P bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
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2 / 4 page  FDZ202P Rev. A (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ===∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25 °C 28 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage Current, Forward VGS = –12 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage Current, Reverse VGS = 12 V VDS = 0 V 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.9 –1.5 V RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –5.5 A VGS = –2.5 V, ID = –4.0 A 0.036 0.060 0.045 0.075 Ω Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –2.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.3 A (Note 2) –0.77 –1.2 V Notes: 1. RθJA is the a function of the junction-to-case (RθJC), case-to-ambient (RθCA ) and the PC Board (RθBA ) thermal resistance where the case thermal reference is defined the top surface of the package. RθJC is guaranteed by design while RθCA and RθBA are determined by the user's design. (a). RθJA = 55°C/W (steady-state) when mounted on 1 in 2 of 2 oz. copper. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Số phần tương tự - FDZ202P |
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Mô tả tương tự - FDZ202P |
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