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MCP1755S bảng dữ liệu(PDF) 6 Page - Microchip Technology |
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MCP1755S bảng dữ liệu(HTML) 6 Page - Microchip Technology |
6 / 40 page MCP1755/1755S DS25160A-page 6 2012 Microchip Technology Inc. Output Voltage Regulation VOUT VR – 2.0% VR +0.85% VR +2.0 % V Note 2 VOUT Temperature Coefficient TCVOUT — 35 ppm/°C Note 3 Line Regulation VOUT/ (VOUT x VIN) -0.05 ±0.01 +0.05 %/V VR +1V VIN 16V Load Regulation VOUT/VOUT -0.5 ±0.1 +0.5 %IL = 1.0 mA to 300 mA, Note 4 Dropout Voltage (Note 5)VDROPOUT — 300 500 mV IL = 300 mA Dropout Current IDO —75 120 µA VIN =0.95VR, IOUT =0 mA Undervoltage Lockout Undervoltage Lockout UVLO — 3.0 — V Rising VIN Undervoltage Lockout Hysterisis UVLOHYS — 300 — mV Falling VIN Shutdown Input Logic High Input VSHDN-HIGH 2.4 —VIN(MAX) V Logic Low Input VSHDN-LOW 0.0 — 0.8 V Shutdown Input Leakage Current SHDNILK —0.02 0.2 µA SHDN =16V Power Good Output PWRGD Input Voltage Operating Range VPWRGD_VIN 1.7 —VIN VISINK =1 mA PWRGD Threshold Voltage (Referenced to VOUT) VPWRGD_TH 90 92 94 %VOUT Falling Edge of VOUT PWRGD Threshold Hysteresis VPWRGD_HYS —2.0 — %VOUT Rising Edge of VOUT PWRGD Output Voltage Low VPWRGD_L —0.2 0.45 VIPWRGD_SINK = 5.0 mA, VOUT =0V PWRGD Output Sink Current IPWRGD_L 5.0 —— mA VPWRGD 0.45V AC/DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, all limits are established for VIN =VR +1V, Note 1, ILOAD =1 mA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA =+25°C, tr(VIN) = 0.5 V/µs, SHDN =VIN, PWRGD = 10K to VOUT. Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C. Parameters Sym. Min. Typ. Max. Units Conditions Note 1: The minimum VIN must meet two conditions: VIN 3.6V and VIN VR + VDROPOUT(MAX). 2: VR is the nominal regulator output voltage when the input voltage VIN =VRated +VDROPOUT(MAX) or VIN = 3.6V (whichever is greater); IOUT =1 mA. 3: TCVOUT =(VOUT-HIGH –VOUT-LOW)x 106/(VR x Temperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. 4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage value that was measured with an applied input voltage of VIN =VR +1V or VIN = 3.6V (whichever is greater). 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability. 7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. 8: See Section 4.6 “Shutdown Input (SHDN)” and Figure 2-34. |
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