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MCP1755S bảng dữ liệu(PDF) 6 Page - Microchip Technology

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Giải thích chi tiết về linh kiện  300 mA, 16V, High-Performance LDO
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MCP1755/1755S
DS25160A-page 6
 2012 Microchip Technology Inc.
Output Voltage Regulation
VOUT
VR
2.0%
VR +0.85% VR +2.0
%
V
Note 2
VOUT Temperature
Coefficient
TCVOUT
35
ppm/°C Note 3
Line Regulation
VOUT/
(VOUT x VIN)
-0.05
±0.01
+0.05
%/V
VR +1V  VIN  16V
Load Regulation
VOUT/VOUT
-0.5
±0.1
+0.5
%IL = 1.0 mA to 300 mA, Note 4
Dropout Voltage (Note 5)VDROPOUT
300
500
mV
IL = 300 mA
Dropout Current
IDO
—75
120
µA
VIN =0.95VR, IOUT =0 mA
Undervoltage Lockout
Undervoltage Lockout
UVLO
3.0
V
Rising VIN
Undervoltage Lockout
Hysterisis
UVLOHYS
300
mV
Falling VIN
Shutdown Input
Logic High Input
VSHDN-HIGH
2.4
—VIN(MAX)
V
Logic Low Input
VSHDN-LOW
0.0
0.8
V
Shutdown Input Leakage
Current
SHDNILK
—0.02
0.2
µA
SHDN =16V
Power Good Output
PWRGD Input
Voltage Operating Range
VPWRGD_VIN
1.7
—VIN
VISINK =1 mA
PWRGD Threshold
Voltage
(Referenced to VOUT)
VPWRGD_TH
90
92
94
%VOUT Falling Edge of VOUT
PWRGD Threshold
Hysteresis
VPWRGD_HYS
—2.0
%VOUT Rising Edge of VOUT
PWRGD Output
Voltage Low
VPWRGD_L
—0.2
0.45
VIPWRGD_SINK = 5.0 mA,
VOUT =0V
PWRGD Output
Sink Current
IPWRGD_L
5.0
——
mA
VPWRGD  0.45V
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN =VR +1V, Note 1,
ILOAD =1 mA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA =+25°C, tr(VIN) = 0.5 V/µs, SHDN =VIN,
PWRGD = 10K to VOUT. Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
The minimum VIN must meet two conditions: VIN  3.6V and VIN  VR + VDROPOUT(MAX).
2:
VR is the nominal regulator output voltage when the input voltage VIN =VRated +VDROPOUT(MAX) or VIN = 3.6V (whichever is
greater); IOUT =1 mA.
3:
TCVOUT =(VOUT-HIGH –VOUT-LOW)x 106/(VR x Temperature), VOUT-HIGH = highest voltage measured over the temperature
range. VOUT-LOW = lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage
value that was measured with an applied input voltage of VIN =VR +1V or VIN = 3.6V (whichever is greater).
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction
temperatures above +150°C can impact the device reliability.
7:
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired
junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient
temperature is not significant.
8:
See Section 4.6 “Shutdown Input (SHDN)” and Figure 2-34.


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