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ADG659WYRUZ-REEL71,2 bảng dữ liệu(PDF) 7 Page - Analog Devices |
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ADG659WYRUZ-REEL71,2 bảng dữ liệu(HTML) 7 Page - Analog Devices |
7 / 20 page ADG658/ADG659 Rev. B | Page 7 of 20 2.7 V TO 3.6 V SINGLE SUPPLY VDD = 2.7 to 3.6 V, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 3. B Version Y Version Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 to VDD V VDD = 2.7 V, VSS = 0 V On Resistance (RON) 185 Ω typ VS = 0 V to 2.7 V, IS = 0.1 mA; see Figure 21 300 350 400 Ω max On Resistance Match between 2 Ω typ VS = 1.5 V, IS = 0.1 mA Channels (∆RON) 4.5 6 7 Ω max LEAKAGE CURRENTS VDD = 3.3 V Source OFF Leakage IS (OFF) ±0.005 nA typ VS = 1 V/3 V, VD = 3 V/1 V; see Figure 22 ±0.2 ±5 nA max Drain OFF Leakage ID (OFF) ±0.005 nA typ VS = 1 V/3 V, VD = 3 V/1 V; see Figure 23 ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max Channel ON Leakage ID, IS (ON) ±0.005 nA typ VS = VD = 1 V or 3 V, see Figure 24 ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.5 V max Input Current IINL or IINH 0.005 μA typ VIN = VINL or VINH ±1 μA max CIN, Digital Input Capacitance 2 pF typ DYNAMIC CHARACTERISTICS1 tTRANSITION 200 ns typ RL = 300 Ω, CL = 35 pF 370 440 490 ns max VS = 1.5 V; see Figure 25 tON (EN) 230 ns typ RL = 300 Ω, CL = 35 pF 370 440 490 ns max VS = 1.5 V; see Figure 27 tOFF (EN) 50 ns typ RL = 300 Ω, CL = 35 pF 80 90 110 ns max VS = 1.5 V; see Figure 27 Break-Before-Make Time Delay, tBBM 200 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 1.5 V; see Figure 26 Charge Injection 1 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 28 2 pC max Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 31 (ADG659) −3 dB Bandwidth ADG658 160 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30 ADG659 300 MHz typ CS (OFF) 5 pF typ f = 1 MHz CD (OFF) ADG658 29 pF typ f = 1 MHz ADG659 15 pF typ f = 1 MHz |
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