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ADG659WYRUZ-REEL71,2 bảng dữ liệu(PDF) 7 Page - Analog Devices

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ADG658/ADG659
Rev. B | Page 7 of 20
2.7 V TO 3.6 V SINGLE SUPPLY
VDD = 2.7 to 3.6 V, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3.
B Version
Y Version
Parameter
+25°C
−40°C
to +85°C
−40°C
to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
VDD = 2.7 V, VSS = 0 V
On Resistance (RON)
185
Ω typ
VS = 0 V to 2.7 V, IS = 0.1 mA; see Figure 21
300
350
400
Ω max
On Resistance Match between
2
Ω typ
VS = 1.5 V, IS = 0.1 mA
Channels (∆RON)
4.5
6
7
Ω max
LEAKAGE CURRENTS
VDD = 3.3 V
Source OFF Leakage IS (OFF)
±0.005
nA typ
VS = 1 V/3 V, VD = 3 V/1 V; see Figure 22
±0.2
±5
nA max
Drain OFF Leakage ID (OFF)
±0.005
nA typ
VS = 1 V/3 V, VD = 3 V/1 V; see Figure 23
ADG658
±0.2
±5
nA max
ADG659
±0.1
±2.5
nA max
Channel ON Leakage ID, IS (ON)
±0.005
nA typ
VS = VD = 1 V or 3 V, see Figure 24
ADG658
±0.2
±5
nA max
ADG659
±0.1
±2.5
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.5
V max
Input Current
IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±1
μA max
CIN, Digital Input Capacitance
2
pF typ
DYNAMIC CHARACTERISTICS1
tTRANSITION
200
ns typ
RL = 300 Ω, CL = 35 pF
370
440
490
ns max
VS = 1.5 V; see Figure 25
tON (EN)
230
ns typ
RL = 300 Ω, CL = 35 pF
370
440
490
ns max
VS = 1.5 V; see Figure 27
tOFF (EN)
50
ns typ
RL = 300 Ω, CL = 35 pF
80
90
110
ns max
VS = 1.5 V; see Figure 27
Break-Before-Make Time Delay, tBBM
200
ns typ
RL = 300 Ω, CL = 35 pF
10
ns min
VS1 = VS2 = 1.5 V; see Figure 26
Charge Injection
1
pC typ
VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 28
2
pC max
Off Isolation
−90
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29
Channel-to-Channel Crosstalk
−90
dB typ
RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 31
(ADG659)
−3 dB Bandwidth
ADG658
160
MHz typ
RL = 50 Ω, CL = 5 pF; see Figure 30
ADG659
300
MHz typ
CS (OFF)
5
pF typ
f = 1 MHz
CD (OFF)
ADG658
29
pF typ
f = 1 MHz
ADG659
15
pF typ
f = 1 MHz


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