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TC1302BHPVMFTR bảng dữ liệu(PDF) 4 Page - Microchip Technology |
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TC1302BHPVMFTR bảng dữ liệu(HTML) 4 Page - Microchip Technology |
4 / 26 page TC1302A/B DS21333C-page 4 2003-2012 Microchip Technology Inc. TEMPERATURE SPECIFICATIONS Shutdown Supply Current TC1302A IIN_SHDNA —58 90 µA SHDN2 = GND Shutdown Supply Current TC1302B IIN_SHDNB — 0.1 1 µA SHDN1 = SHDN2 = GND Power Supply Rejection Ratio PSRR — 58 — dB f 100 Hz, I OUT1 = IOUT2 = 50 mA, CIN = 0 µF Output Noise eN — 830 — nV/(Hz)½ f 1kHz, I OUT1 = IOUT2 = 50 mA, CIN = 0 µF Output Short Circuit Current (Average) VOUT1 IOUTsc1 — 200 — mA RLOAD1 1 VOUT2 IOUTsc2 — 140 — mA RLOAD2 1 SHDN Input High Threshold VIH 45 —— %VIN VIN = 2.7V to 6.0V SHDN Input Low Threshold VIL —— 15 %VIN VIN = 2.7V to 6.0V Wake Up Time (From SHDN mode), (VOUT2) tWK —5.3 20 µs VIN = 5V, IOUT1 = IOUT2 = 30 mA, See Figure 5-1 Settling Time (From SHDN mode), (VOUT2) tS —50 — µs VIN = 5V, IOUT1 = IOUT2 = 50 mA, See Figure 5-2 Thermal Shutdown Die Temperature TSD — 150 — °C VIN = 5V, IOUT1 = IOUT2 = 100 µA Thermal Shutdown Hysteresis THYS —10 — °C VIN = 5V Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN = +2.7V to +6.0V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Operating Junction Temperature Range TA -40 — +125 °C Steady State Storage Temperature Range TA -65 — +150 °C Maximum Junction Temperature TJ — — +150 °C Transient Thermal Package Resistances Thermal Resistance, MSOP8 JA — 208 — °C/W Typical 4-Layer Board Thermal Resistance, DFN8 JA — 41 — °C/W Typical 4-Layer Board with Vias DC CHARACTERISTICS (Continued) Electrical Specifications: Unless otherwise noted, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF, CBYPASS = 10 nF, SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Note 1: The minimum VIN has to meet two conditions: VIN 2.7V and VIN VR + VDROPOUT. 2: VR is defined as the higher of the two regulator nominal output voltages (VOUT1 or VOUT2). 3: TCVOUT = ((VOUTmax - VOUTmin) * 10 6)/(V OUT * T). 4: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec. 6: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its value measured at a 1V differential. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. |
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