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Giải thích chi tiết về linh kiện  80 mA, Tiny CMOS LDO With Shutdown
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TC1016
DS21666B-page 2
© 2005 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Power Dissipation................ Internally Limited (Note 7)
Operating Temperature ................. -40°C < TJ < 125°C
Storage Temperature......................... -65°C to +150°C
Maximum Voltage On Any Pin........ VIN + 0.3V to -0.3V
*Notice: Static-sensitive device. Unused devices must be
stored in conductive material. Protect devices from static dis-
charge and static fields. Stresses above those listed under
Absolute Maximum Ratings may cause permanent damage to
the device. These are stress ratings only and functional oper-
ation of the device at these or any other conditions above
those
indicated
in
the
operational
sections
of
the
specifications is not implied. Exposure to Absolute Maximum
Rating Conditions for extended periods may affect device
reliability
ELECTRICAL CHARACTERISTICS
VIN = VR + 1V, IL = 100 µA, CL = 1.0µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for
junction temperatures of – 40°C to +125°C.
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
Input Operating Voltage
VIN
2.7
6.0
V
Note 1
Maximum Output Current
IOUTMAX
80
——
mA
Output Voltage
VOUT
VR – 2.5%
VR ±0.5%
VR + 2.5%
V
Note 2
V
OUT Temperature Coefficient
TCVOUT
40
ppm/°C
Note 3
Line Regulation
(ΔVOUT/ΔVIN)/V
R
—0.01
0.2
%/V
(VR + 1V) < VIN < 6V
Load Regulation (Note 4)
ΔVOUT/VR
—0.23
1
%IL = 0.1 mA to IOUTMAX
Dropout Voltage (Note 5)VIN – VOUT
2
100
150
200
300
mV
IL = 100 µA
IL = 50 mA
IL = 80 mA
Supply Current
IIN
—53
90
µA
SHDN = VIH, IL = 0
Shutdown Supply Current
IINSD
0.05
0.5
µA
SHDN = 0V
Power Supply Rejection Ratio
PSRR
58
dB
f =1 kHz, IL = 50 mA
Wake-Up Time
(from Shutdown mode)
tWK
—10
µs
VIN = 5V, IL = 60 mA,
CIN = 1 µF, COUT = 1 µF,
f = 100 Hz
Settling Time
(from Shutdown Mode)
tS
—32
µs
VIN = 5V, IL = 60 mA,CIN =
1µF, COUT = 1 µF, f =
100 Hz
Output Short Circuit Current
IOUTSC
120
mA
VOUT = 0V
Thermal Regulation
VOUT/PD
—0.04
V/W
Notes 6, 7
Thermal Shutdown Die
Temperature
TSD
160
°C
Thermal Shutdown Hysteresis
ΔTSD
—10
°C
Output Noise
eN
800
nV/
√Hz f = 10 kHz
SHDN Input High Threshold
VIH
60
——
%VIN
VIN = 2.7V to 6.0V
SHDN Input Low Threshold
VIL
——
15
%VIN
VIN = 2.7V to 6.0V
Note
1:
The minimum V
IN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%)+VDROPOUT.
2:
V
R is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal
Regulation specification.
5:
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6:
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to Ilmax at V
IN = 6V for t = 10 msec.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the
thermal resistance from junction-to-air (i.e. T
A, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details.
TCV
OUT
V
OUTMAX
V
OUTMIN
() 10
6
×
V
OUT
T
Δ
×
--------------------------------------------------------------------------------------
=


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