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BUK762R6-40E bảng dữ liệu(PDF) 1 Page - NXP Semiconductors

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BUK762R6-40E
N-channel TrenchMOS standard level FET
13 July 2012
Product data sheet
Scan or click this QR code to view the latest information for this product
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
40
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
[1]
-
-
100
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
-
-
263
W
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
-
2.2
2.6
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 32 V;
Fig. 13; Fig. 14
-
26.6
-
nC
[1] Continuous current is limited by package.


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