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FDG315 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDG315 bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page FDG315N Rev. C FDG315N N-Channel Logic Level PowerTrench MOSFET July 2000 2000 Fairchild Semiconductor International Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) 2A - Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0.75 W PD (Note 1b) 0.48 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .15 FDG315N 7’’ 8mm 3000 units General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Power Management Features • 2 A, 30 V. R DS(ON) = 0.12 Ω @ VGS = 10 V R DS(ON) = 0.16 Ω @ VGS = 4.5 V. • Low gate charge (2.1nC typical). • High performance trench technology for extremely low R DS(ON). • Compact industry standard SC70-6 surface mount package. SC70-6 D S D G D D 3 5 6 4 1 2 3 |
Số phần tương tự - FDG315 |
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Mô tả tương tự - FDG315 |
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