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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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FDD6512A bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDD6512A bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  November 2001 ©2001 Fairchild Semiconductor Corp. FDD6512A/FDU6512A Rev B (W) FDD6512A/FDU6512A 20V N-Channel PowerTrench ® ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Applications • DC/DC converter • Motor drives Features • 36 A, 20 V RDS(ON) = 21 m Ω @ V GS = 4.5 V RDS(ON) = 31 m Ω @ V GS = 2.5 V • Low gate charge (12 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) G S D TO-252 D-PAK (TO-252) G D S I-PAK (TO-251AA) S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Continuous Drain Current @TC=25°C (Note 3) 36 A @TA=25°C (Note 1a) 10.7 Pulsed (Note 1a) 100 Power Dissipation @TC=25°C (Note 3) 43 @TA=25°C (Note 1a) 3.8 PD @TA=25°C (Note 1b) 1.6 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6512A FDD6512A D-PAK (TO-252) 13’’ 12mm 2500 units FDU6512A FDU6512A I-PAK (TO-251) Tube N/A 75 |
Số phần tương tự - FDD6512A |
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Mô tả tương tự - FDD6512A |
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