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FDD603AL bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDD603AL bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDD603AL, Rev. B July 1999 1999 Fairchild Semiconductor Corporation G S D TO-252 S D G FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features 33 A, 30 V. R DS(ON) = 0.023 Ω @ VGS = 10 V R DS(ON) = 0.037 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low R DS(ON) . Absolute Maximum Ratings TC=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous (Note 1) 33 TA = 25 °C (Note 1a) 9.5 Maximum Drain Current -Pulsed 80 A Maximum Power Dissipation @ TC = 25 oC (Note 1) 39 TA = 25 oC (Note 1a) 3.2 PD TA = 25 oC (Note 1b) 1.3 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R θJC Thermal Resistance, Junction-to-Case (Note 1) 2.5 °C/W 40 °C/W R θJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape W idth Quantity FDD603AL FDD603AL 13’’ 16mm 2500 General Description This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on- state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. Applications DC/DC converters Motor drives |
Số phần tương tự - FDD603AL |
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Mô tả tương tự - FDD603AL |
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